2021 "Power semiconductor reliability and certification center establishment project" corporate support project final pass

Project name: Development of 650V/1.2kV-class trench-type SiC power semiconductor device for application of industrial inverter and module co-pack for EV/HEV

Subject : Busan Techno Park
Hosted by: Semihow Co., Ltd.

This project aims to develop power semiconductor devices using silicon carbide (SiC) material.
SiC power semiconductors have advantages such as high withstand voltage characteristics, high temperature operation, and excellent thermal conductivity.

Semihow Co., Ltd. has signed an NDA (non-disclosure agreement) with the Power Semiconductor Commercialization Center and is in the process of a development contract.
We will do our best to become a global power semiconductor company with excellent technology by succeeding in the development and mass production of SiC power semiconductor devices.

Project name: Development of 650V/1.2kV-class trench-type SiC power semiconductor device for EV/HEV module CO-PAK and industrial inverter

Auspice by: (Secondary) Busan Techno Park
Manage by: Semihow Co., Ltd.

This project aims to develop a power semiconductor device using silicon carbide (SiC) material.
SiC power semiconductors have advantages such as high withstand voltage characteristics, high temperature operation, and excellent thermal conductivity.

Semihow Co., Ltd. has signed an NDA (non-disclosure agreement) with the Power Semiconductor Commercialization Center and is in the process of a development contract.
We will strive to become a global power semiconductor company with excellent technology by succeeding in the development and mass production of SiC power semiconductor devices.