The development of a new generation SJ-MOSFET with a 40% reduction in Rsp, and a 650V/1200V IGBT with a 20% improvement in Eoff loss,
as well as a 30V SGT, has been confirmed for the second half of 2024.
These products are targeted for completion by Q1 2025. This development is expected to enable entry into a wider range of application markets and potentially secure a new cash cow product line.