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History

2019
More than Super Junction(“SJ”) MOSFET 600-900V, 110 products are developed at the Samsung Foundry(“SF”) 8inch Fab.
Under porting SemiHow Shielded Gate Trench(“SGT”) MOSFET Process and Normal Low Voltage Trench(“LVT”) MOSFET Process to SF 8inch Fab.
2018
Sign a contract with the SF Division to port SemiHow Process technology to SF 8inch Fab and to produce SemiHow SJ MOSFET, SGT MOSFET, Planar MOSFET, FS IGBT products at SF.
Completed porting SemiHow SJ MOSFET Process(Epi Stack Technology) and Planar MOSFET 800,900V to SF 8inch Fab.
SJ MOSFET Product developed at SF 8inch Fab was approved by and delivered for Samsung Mobile Division.
2016
Exceeding $ 5M of sales figures for mobile charger of SAMSUNG with Super Junction MOSFET
2015,16
Supply about 110 million 700V SJ MOSFETs for Samsung Galaxy series charger.
2014
Develop 700v SJ MOSFET with Deep Trench Technology and Approved for Samsung Galaxy S5, Note4 charger.
2012
Approved HV MOSFET Products for Samsung Galaxy series charger and Triac products for Washing machine application
Develop Thyristor (Triac, SCR)
2010,11
Develop Power Switch MCP(PWM IC+MOSFET) and PFC IC at DB Hitech 8inch Fab.
Develop Soc(PWM IC+MOSFET) at Dalsa(in Canada)’s BCDMOS 8inch Process
2008,9,10
Develop Gen2, Gen3, Gen4 Planar MOSFETs at Guoyu, ZhongHuan and FMIC 6inch Fab. (Transplant of SemiHow’ Process/Production technologies)
2007
Registered as a Power Discrete supplier to Samsung Electronics and China/Korea Big Customers.
Achieve sales of USD $ 15 million.
2004
Develop High Voltage(500-900V) Planar MOSFETs at China Resources Microelectronics Limited 5inch Fab. (Transplant of SemiHow’ Process/Production technologies)
2003
Developed Power BJT(Bipolar Junction Transistor) 700Volt 13005,7,9 for PC Power Application at Huashan Electronics 4inch Fab. (Transplant of SemiHow’ Process/Production technologies)
2002
SemiHow established
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