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Selected as First Vendor for Cuckoo Electronics.
Completion of 100V SGT and 1600V IGBT Development
Launch of the Power Module Line-up
Completion of 60V SGT and 1200V IGBT Development
Expansion and relocation of headquarters to Cheongna, Incheon
Approval of all models of IGBT for 650Volt and 1400Volt grades in Cuckoo Electronics induction ranges.
Recognition as a $10 million export champion by the Ministry of Trade, Industry, and Energy.
Bitmain, the world's largest mining equipment company, has been approved and is the first vendor for supply.
ASUS ATX Power has received approval for supply.
Completion of IGBT development for 650Volt and 1400Volt grades.
Commendation from the Minister of SMEs and Startups.
Commencement of Field Stop IGBT development for 650Volt and 1400Volt grades in SF.
More than Super Junction(“SJ”) MOSFET 600-900V, 110 products are developed at the Samsung Foundry(“SF”) 8inch Fab.
Under porting SemiHow Shielded Gate Trench(“SGT”) MOSFET Process and Normal Low Voltage Trench(“LVT”) MOSFET Process to SF 8inch Fab.
Sign a contract with the SF Division to port SemiHow Process technology to SF 8inch Fab and to produce SemiHow SJ MOSFET, SGT MOSFET, Planar MOSFET, FS IGBT products at SF.
Completed porting SemiHow SJ MOSFET Process(Epi Stack Technology) and Planar MOSFET 800,900V to SF 8inch Fab.
SJ MOSFET Product developed at SF 8inch Fab was approved by and delivered for Samsung Mobile Division.
Exceeding $ 5M of sales figures for mobile charger of SAMSUNG with Super Junction MOSFET
Supply about 110 million 700V SJ MOSFETs for Samsung Galaxy series charger.
Develop 700v SJ MOSFET with Deep Trench Technology and Approved for Samsung Galaxy S5, Note4 charger.
Approved HV MOSFET Products for Samsung Galaxy series charger and Triac products for Washing machine application
Develop Thyristor (Triac, SCR)
Develop Power Switch MCP(PWM IC+MOSFET) and PFC IC at DB Hitech 8inch Fab.
Develop Soc(PWM IC+MOSFET) at Dalsa(in Canada)’s BCDMOS 8inch Process
Develop Gen2, Gen3, Gen4 Planar MOSFETs at Guoyu, ZhongHuan and FMIC 6inch Fab. (Transplant of SemiHow’ Process/Production technologies)
Registered as a Power Discrete supplier to Samsung Electronics and China/Korea Big Customers.
Achieve sales of USD $ 15 million.
Develop High Voltage(500-900V) Planar MOSFETs at China Resources Microelectronics Limited 5inch Fab. (Transplant of SemiHow’ Process/Production technologies)
Developed Power BJT(Bipolar Junction Transistor) 700Volt 13005,7,9 for PC Power Application at Huashan Electronics 4inch Fab. (Transplant of SemiHow’ Process/Production technologies)
SemiHow established